? 2007 ixys corporation, all rights reserved trenchmv tm power mosfet n-channel enhancement mode ixta98n075t IXTP98N075T v dss =75 v i d25 =98 a r ds(on) 10 m ds99541(04/07) g = gate d = drain s = source tab = drain to-263 (ixta) to-220 (ixtp) symbol test conditions maximum ratings v dss t j = 25 c to 175 c75v v dgr t j = 25 c to 175 c; r gs = 1 m 75 v v gsm transient 20 v i d25 t c = 25 c98a i lrms package current limit (rms): 75 a i dm t c = 25 c, pulse width limited by t jm 280 a dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 175 c, r g = 5 i ar t c = 25 c25a e as t c = 25 c 600 mj p d t c = 25 c 230 w t j -55 ... +175 c t jm 175 c t stg -40 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-220 3.0 g to-263 2.5 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a75v v gs(th) v ds = v gs , i d = 100 a 2.0 4.0 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 2 a v gs = 0 v t j = 150 c 150 a r ds(on) v gs = 10 v, i d = 25 a, notes 1, 2 10 m g s tab tab g s features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - 42v power bus - abs systems dc/dc converters and off-line ups primary switch for 24v and 48v systems high current switching applications advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixta98n075t IXTP98N075T symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , note 1 38 64 s c iss 3100 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 520 pf c rss 125 pf t d(on) resistive switching times 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 42 ns t d(off) r g = 5 (external) 42 ns t f 27 ns q g(on) 68 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 18 nc q gd 15 nc r thjc 0.65 c/w r thcs 0.50 c/w source-drain diode symbol test conditionscharacteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 98 a i sm repetitive 280 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = 49 a, -di/dt = 100 a/ s50ns v r = 40 v, v gs = 0 v note 1. pulse test, t 300 s, duty cycle, d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location is 5 mm or less from the package body. advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-220 (ixtp) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-263 (ixta) outline ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
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